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Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Release Time:2021-11-29| Hits:

Title of Paper:Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Journal:IEEE Transactions on Electron Devices

First Author:Ming Yang

Correspondence Author:Zhaojun Lin

All the Authors:Jingtao Zhao,Peng Cui,Chen Fu,Yuanjie Lv,Zhihong Feng

Volume:63

Issue:4

Page Number:1471

DOI Number:10.1109/TED.2016.2532919

Translation or Not:No

Date of Publication:2016-03

Included Journals:SCI

Release Time:2021-11-29

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Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors
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