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Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Journal:Journal of Applied Physics

First Author:Ming Yang

Correspondence Author:Zhaojun Lin

All the Authors:Yuanjie Lv,Zhihong Feng,Wei Lin,Peng Cui,Yan Liu,Chen Fu

Volume:119

Page Number:224501

DOI Number:10.1063/1.4953645

Translation or Not:No

Date of Publication:2016-06

Included Journals:SCI

Release Time:2021-11-29

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Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

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