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Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs
  • Affiliation of Author(s):
    微电子学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    王鸣雁
  • Document Code:
    6A449E6A0FD14BC98E8DFDB859B8447D
  • Issue:
    12
  • Number of Words:
    3
  • Translation or Not:
    no
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