sMxS1rUCGDFLIDUSvWQMZooxW6cYf7hEOCqUe4YRtsDrvLzk9qmRHaEKEtCg

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Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Release Time:2022-12-13| Hits:

Institution:集成电路学院

Title of Paper:Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Journal:APPLIED PHYSICS LETTERS

First Author:周衡

Document Code:F21FE017C09E49068D2EF4356497F757

Issue:21

Number of Words:3

Translation or Not:No

Date of Publication:2022-11

Release Time:2022-12-13

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