Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
Scientific Reports
First Author:
崔鹏
Document Code:
FB1B98B449EF416D9EA457DB30EABD80
Volume:
12
Issue:
1
Page Number:
16683
Number of Words:
3500
Translation or Not:
no
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