OAwAG4HY2pBGgt1ysFvwv6tG5XvnxxBghpcNlJERTtTG1OXtyG8UfLeoz5vw

Paper Publications

Home >> Scientific Research >> Paper Publications

Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

Release Time:2022-12-27| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

Journal:Scientific Reports

First Author:崔鹏

Document Code:FB1B98B449EF416D9EA457DB30EABD80

Volume:12

Issue:1

Page Number:16683

Number of Words:3500

Translation or Not:No

Date of Publication:2022-10

Release Time:2022-12-27

Prev One:
Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment
Next One:
Study of electrical transport properties of GaN-based side-gate heterostructure transistors

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --