Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
Crystals
First Author:
崔鹏
Document Code:
D01F9BC84B5D49F29625A47921AE486F
Volume:
12
Issue:
11
Page Number:
1521
Number of Words:
3500
Translation or Not:
no
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