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Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Release Time:2022-12-27| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Journal:Crystals

First Author:崔鹏

Document Code:D01F9BC84B5D49F29625A47921AE486F

Volume:12

Issue:11

Page Number:1521

Number of Words:3500

Translation or Not:No

Date of Publication:2022-11

Release Time:2022-12-27

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Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
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Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

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