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The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    IEEE Transactions on Electron Devices
  • First Author:
    张斌
  • Document Code:
    B1BC604AAB9442D8AE18D256B1AA3FCF
  • Issue:
    1
  • Number of Words:
    4
  • Translation or Not:
    no
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