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The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode

Release Time:2024-05-17| Hits:

Institution:新一代半导体材料研究院

Title of Paper:The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode

Journal:IEEE Transactions on Electron Devices

First Author:张斌

Document Code:B1BC604AAB9442D8AE18D256B1AA3FCF

Issue:1

Number of Words:4

Translation or Not:No

Date of Publication:2024-04

Release Time:2024-05-17

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