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Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Release Time:2024-11-21| Hits:

Institution:集成电路学院

Title of Paper:Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

Journal:APPLIED PHYSICS LETTERS

First Author:王鸣雁

Document Code:D1843D66CD0A449B9096E62CABA4B436

Issue:125

Number of Words:3000

Translation or Not:No

Date of Publication:2024-11

Release Time:2024-11-21

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Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs

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