Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
Applied Physics Letters
First Author:
罗鑫
Document Code:
1843556233512062977
Volume:
125
Issue:
12
Number of Words:
4000
Translation or Not:
no
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