山东大学教师主页韩吉胜科学研究中文主页

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个人信息

韩吉胜

教师姓名：韩吉胜
教师拼音名称：hanjisheng
入职时间：2020-11-15
所在单位：新一代半导体材料研究院
性别：男

科学研究

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论文成果 MORE+

Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.Results in Physics.2024(62 (2024) 107799):1
张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.IEEE Transactions on Electron Devices.2024(1)
王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.MICROELECTRONICS JOURNAL.2025,160(0)
王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature.21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024.2025:179-183
王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination.MICROELECTRONICS JOURNAL.2025(161):106732

专利 MORE+

著作成果 MORE+

Semiconducting Polymer Materials for Biosensing Applications

科研项目 MORE+

科研团队

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