韩吉胜山东大学主页平台管理系统--中文主页

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个人信息

韩吉胜

教师姓名：韩吉胜
教师拼音名称：hanjisheng
入职时间：2020-11-15
所在单位：新一代半导体材料研究院
性别：男

论文成果

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[1] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. Results in Physics, 1, 2024.
[2] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
[3] 王天露. Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration. MICROELECTRONICS JOURNAL, 160, 2025.
[4] 王天露. Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature. 179-183, 2025.
[5] 王新宇. Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination. MICROELECTRONICS JOURNAL, 106732, 2025.
[6] 罗兰. The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices. Physica Status Solidi A-Applications and Materials Science, 2025.
[7] 曾繁朋. failure mechanism of 1.2 kV/20 A 4H-SiC Schottky barrier diodes under humidity and high reverse bias voltage. MICROELECTRONICS RELIABILITY, 1, 2025.
[8] 王新宇. Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode. 2024.
[9] 巩守来. Effect of dicing mode on the characteristics of silicon carbide devices. 2024.
[10] 曾繁朋. Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test. 2024.
[11] 来玲玲. Impacts of silicon carbide defects on electrical characteristics of SiC devices. JOURNAL OF APPLIED PHYSICS, 2025.
[12] 胡秀飞. Roughness control in the processing of 2-inch polycrystalline diamond films on 4H-SiC wafers. Materials Science in Semiconductor Processing, 184, 2024.
[13] Wang, Xinyu. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode. 物理结果, 62, 2024.
[14] 陈思衡. High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V. IEEE Electron Device Letters, 12, 2343, 2024.
[15] 罗鑫. Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer. APPLIED PHYSICS LETTERS, 125, 2024.
[16] 王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.

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