韩吉胜山东大学主页平台管理系统--中文主页

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个人信息

韩吉胜

教师姓名：韩吉胜
教师拼音名称：hanjisheng
入职时间：2020-11-15
所在单位：新一代半导体材料研究院
性别：男

论文成果

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[1] 王新宇. Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode. IEEE Electron Device Letters, 2024.
[2] 胡秀飞. Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance. VACUUM, 211, 2023.
[3] 陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.
[4] 罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors. Journal of Physics and Chemistry of Solids, 187, 2024.
[5] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
[6] 王希玮. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
[7] 胡秀飞. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.

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