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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[136] 陈秀芳 , 徐现刚 , 蒋民华 , 彭燕 and 胡小波. Growth of wafer size Graphene on SiC Substrates. Materials science forum, 687, 90, 2011.
[137] 胡小波. Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method. Journal of crystal growth, v 292, 192, 2006.
[138] 胡小波. Dependence of photochromic damage on polarization in KTiOPO4 crystals. Journal of crystal growth, 247, 137, 2002.
[139] 徐现刚 and 胡小波. Characterization of foreign grain on 6H-SiC facet. Journal of Central South University of Techno, 16, 344, 2009.
[140] 陈秀芳 , 彭燕 , 胡小波 , 徐现刚 and 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm, 20, 6957, 2018.
[141] 于光伟 , 胡小波 , 刘铎 , 孙大亮 , 李静 , 张怀金 , 王继扬 Electordepositon of submicron/nanoscale Cu2O/Cu junctions in an ultrathin CuSO4 solution layer. Journal of Electroanalytical Chemistry, 638, 225, 2010.
[142] 胡小波 , 陈秀芳 , 杨祥龙 , 谢雪健 , 肖龙飞 , 徐现刚 and 李天. 锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究. 无机材料学报, 2018.
[143] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS, 2016.
[144] 胡小波 and 徐现刚. Enhanced outputpower of (indium) gallium nitride light emitting diodes by a transparent currentspreading-film composedofadisorderednetworkofindiumtinoxidenanorods. Materials Science in Semiconductor Processing, 2013.
[145] 陈秀芳 , 彭燕 , 胡小波 and 徐化勇. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 2015.
[146] 杨祥龙 , 彭燕 , 胡小波 , 徐现刚 and 陈秀芳. 高质量N 型SiC 单晶生长及其器件应用. 《人工晶体学报》, 2015.
[147] 陈秀芳 , 胡小波 , 徐现刚 and 彭燕. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 2016.
[148] 陈秀芳 , 胡小波 and 彭燕. Thermal conductivity of 4H-SiC single crystals. Journal of applied physics, 2013.
[149] 王建军 and 于光伟. Synthesis and characterization of a coaxial carbon-TiO2 nanotube arrays film with spectral response from UV to NIR and its application in solar energy conversion. Electrochimica Acta, 2019.
[150] 王继扬 and 于光伟. Electordepositon of submicron/nanoscale Cu2O/Cu junctions in an ultrathin CuSO4 solution layer. Journal of Electroanalytical Chemistry, 638, 225, 2010.

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