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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[151] 陈秀芳 , 杨祥龙 , 谢雪健 , 肖龙飞 , 徐现刚 , 胡小波 and 李天. 锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究. 无机材料学报, 2018.
[152] 彭燕 , 胡小波 , 徐现刚 , 蒋民华 and 陈秀芳. Growth of wafer size Graphene on SiC Substrates. Materials science forum, 687, 90, 2011.
[153] 胡小波 , 徐现刚 and 张恒. Using coupling slabs to tailor surface-acoustic-wave band structures in phononic crystals consisting of pillars attached to elastic substrates. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 60, 2017.
[154] 彭燕 , 陈秀芳 , 胡小波 , 徐现刚 and 谢雪健. Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals. JOURNAL OF ALLOYS AND COMPOUNDS, 691, 1033, 2017.
[155] 彭燕 , 陈秀芳 , 胡小波 , 徐现刚 and 谢雪健. Synthesis and characterization of high quality {100} diamond single crystal. Journal of Materials Science-Materials in Electronics, 28, 9813, 2017.
[156] 陈秀芳 , 徐现刚 , 胡小波 and 彭燕. Thermal conductivity of 4H-SiC single crystals. Journal of applied physics, 2013.
[157] 陈秀芳 , 徐现刚 , 胡小波 , 赵显 and 张福生. High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching. Mater Lett, 195, 82, 2017.
[158] 陈秀芳 , 彭燕 , 胡小波 , 徐现刚 and 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm, 20, 6957, 2018.
[159] 陈秀芳 , 徐现刚 , 胡小波 , 赵显 and 张福生. High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching. Materials letters, 195, 82, 2017.
[160] 陈秀芳 , 彭燕 , 胡小波 and 徐化勇. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 2015.
[161] 杨祥龙 , 彭燕 , 胡小波 , 徐现刚 and 陈秀芳. 高质量N 型SiC 单晶生长及其器件应用. 《人工晶体学报》, 2015.
[162] 徐现刚 , 陈秀芳 , 胡小波 and 杨祥龙. 宽禁带SiC单晶衬底研究进展. 《电力电子技术》, 51, 12, 2017.
[163] 陈秀芳 , 彭燕 , 胡小波 , 徐现刚 and 杨祥龙. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth. CrystEngComm, 20, 1705, 2018.
[164] 陈秀芳 , 胡小波 , 徐现刚 and 彭燕. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 2016.
[165] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS, 2016.

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