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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[181] 胡小波. Dependence of photochromic damage on polarization in KTiOPO4 crystals. Journal of crystal growth, 247, 137, 2002.
[182] 胡小波. Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method. Journal of crystal growth, v 292, 192, 2006.
[183] 徐现刚 and 胡小波. Characterization of foreign grain on 6H-SiC facet. Journal of Central South University of Techno, 16, 344, 2009.
[184] 陈秀芳 , 徐现刚 and 胡小波. 金刚石微粉对SiC机械抛光的研究影响. 《人工晶体学报》, 2015.
[185] 陈秀芳 , 徐现刚 and 胡小波. Chemical Mechanical Polishing of 4H-SiC with Strong Oxidizing Slurry. 《人工晶体学报》, 2015.
[186] 陈秀芳 , 彭燕 , 徐现刚 and 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials science forum, 2015.
[187] 徐现刚 and 胡小波. Infrared transmission and reflectivity measurements of 4H- and 6H-SiC single crystals. Materials science forum, 2015.
[188] 徐现刚 and 胡小波. Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE. JOURNAL OF ALLOYS AND COMPOUNDS, 509, 3656, 2011.
[189] 胡小波. Thermal conductivity of 4H-SiC single crystal. Journal of applied physics, 113, 053503-1, 2013.
[190] 胡小波. Comparison of Different Crucible Materials for the Growth of AlN Crystals. 《结构化学》, 2007.
[191] 胡小波. BN坩埚中的AIN单晶生长. 《人工晶体学报》, 2006.
[192] 胡小波. AlN单晶生长研究进展. 《人工晶体学报》, 2005.
[193] 胡小波. Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals. Journal of crystal growth, 2006.
[194] 胡小波. Raman study of phonons in bismuth triborate BiB3O6 crystal. Journal of applied physics, 2004.
[195] 胡小波. Domain structures and phase transitions of PMNT single crystals. Journal of crystal growth, 2004.

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