胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[181] 陈秀芳 , 彭燕 , 徐现刚 and 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials science forum, 2015.
[182] 徐现刚 and 胡小波. Infrared transmission and reflectivity measurements of 4H- and 6H-SiC single crystals. Materials science forum, 2015.
[183] 徐现刚 and 胡小波. Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE. JOURNAL OF ALLOYS AND COMPOUNDS, 509, 3656, 2011.
[184] 胡小波. Thermal conductivity of 4H-SiC single crystal. Journal of applied physics, 113, 053503-1, 2013.
[185] 胡小波. Comparison of Different Crucible Materials for the Growth of AlN Crystals. 《结构化学》, 2007.
[186] 胡小波. BN坩埚中的AIN单晶生长. 《人工晶体学报》, 2006.
[187] 胡小波. AlN单晶生长研究进展. 《人工晶体学报》, 2005.
[188] 胡小波. Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals. Journal of crystal growth, 2006.
[189] 胡小波. Raman study of phonons in bismuth triborate BiB3O6 crystal. Journal of applied physics, 2004.
[190] 胡小波. Domain structures and phase transitions of PMNT single crystals. Journal of crystal growth, 2004.
[191] 胡小波. Development of bulk SiC single crystal grown by physical vapor transport method. Optical Materials, 2003.
[192] 胡小波. 同步辐射单色光形貌术观察6H-SiC单晶中的微管缺陷. 《人工晶体学报》, 2004.
[193] 胡小波. 6H-SiC单晶的生长与缺陷. 硅酸盐学报, 2003.
[194] 徐现刚 and 胡小波. Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC wafers. Acta Metallurgica Sinica (English Letters), 2014.
[195] 胡小波. Initial formation stage and succedent biomineralization of pearls. MATERIALSCHARACTERIZATION, 2014.

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