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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[166] 胡小波 and 徐现刚. Enhanced outputpower of (indium) gallium nitride light emitting diodes by a transparent currentspreading-film composedofadisorderednetworkofindiumtinoxidenanorods. Materials Science in Semiconductor Processing, 2013.
[167] 胡小波 , 王翎 , 彭燕 and 徐现刚. 硅粉形貌对人工合成高纯碳化硅粉料的影响. 《功能材料》, 39, 1989, 2008.
[168] 胡小波 , 陈秀芳 , 杨祥龙 , 徐现刚 and 谢雪健. Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction. CrystEngComm, 19, 6527, 2017.
[169] 胡小波 , 谢雪健 , 徐现刚 and 崔潆心. Spatial variation of lattice plane bending of 4HSiC substrates. CrystEngComm, 19, 3844, 2017.
[170] 胡小波 , 陈秀芳 , 彭燕 , 杨祥龙 , 徐现刚 and 肖龙飞. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory. AIP Advances, 7, 2017.
[171] 彭燕 , 徐现刚 and 胡小波. 6H-SiC成核表面形貌与缺陷产生的研究. 《人工晶体学报》, 38, 7, 2009.
[172] 胡小波. Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography. Journal of Applied Crystallography, 42, 1068, 2009.
[173] 徐现刚 and 胡小波. Birefringence images of micropipes viewed end-on in 6H-SiC single crystals. Journal of Applied Crystallography, 41, 939, 2008.
[174] 胡小波. Raman study of phonons in K2Al2B2O7 crystals. Applied physics letters, 85, 2241, 2004.
[175] 胡小波. Comparative study of KTiOPO4 crystals. Optical Materials, 23, 369, 2003.
[176] 胡小波. Dependence of photochromic damage on polarization in KTiOPO4 crystals. Journal of crystal growth, 247, 137, 2002.
[177] 胡小波. Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method. Journal of crystal growth, v 292, 192, 2006.
[178] 徐现刚 and 胡小波. Characterization of foreign grain on 6H-SiC facet. Journal of Central South University of Techno, 16, 344, 2009.
[179] 陈秀芳 , 徐现刚 and 胡小波. 金刚石微粉对SiC机械抛光的研究影响. 《人工晶体学报》, 2015.
[180] 陈秀芳 , 徐现刚 and 胡小波. Chemical Mechanical Polishing of 4H-SiC with Strong Oxidizing Slurry. 《人工晶体学报》, 2015.

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