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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[76] 胡小波 , 彭燕 and 徐现刚. 以（1015）面为籽晶的6H -SiC单晶生长与缺陷研究. 《人工晶体学报》, 39, 287, 2010.
[77] 胡小波 , 彭燕 and 徐现刚. 6H-SiC成核表面形貌与缺陷产生的研究. 《人工晶体学报》, 38, 7, 2009.
[78] 胡小波 , 徐现刚 and 彭燕. Stacking faults in semi-polar 6H-SiC single crystals. CRYSTAL RESEARCH AND TECHNOLOGY, 36, 357, 2011.
[79] 胡小波 and 徐现刚. Birefringence images of micropipes viewed end-on in 6H-SiC single crystals. Journal of Applied Crystallography, 41, 939, 2008.
[80] 胡小波 and 徐现刚. Characterization of foreign grain on 6H-SiC facet. Journal of Central South University of Techno, 16, 344, 2009.
[81] 陈秀芳 , 杨祥龙 , 徐现刚 and 胡小波. Polarized Raman Scattering of Epitaxial Graphene Prepared by Thermal Decomposition of SiC. ECS Journal of Solid State Science and Technology, 2018.
[82] 谢雪健 , 孙丽 , 陈秀芳 , 杨祥龙 , 胡小波 and 徐现刚. Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique. SCRIPTA MATERIALIA, 76, 2019.
[83] 陈秀芳 , 杨祥龙 , 徐现刚 , 胡小波 , 彭燕 and 秦笑. Raman scattering study on phonon anisotropic properties of SiC. JOURNAL OF ALLOYS AND COMPOUNDS , 776, 1048, 2019.
[84] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS , 2016.
[85] 徐现刚 , 胡小波 , 陈秀芳 and 彭燕. Thermal conductivity of 4H-SiC single crystals. JOURNAL OF APPLIED PHYSICS, 2013.
[86] 于光伟 , 桑元华 , 王正平 , 胡小波 , 徐现刚 , 刘宏 , 王建军 Synthesis and characterization of a coaxial carbon-TiO2 nanotube arrays film with spectral response from UV to NIR and its application in solar energy conversion. Electrochimica Acta, 2019.
[87] 胡小波 , 陈秀芳 , 杨祥龙 , 谢雪健 , 肖龙飞 , 徐现刚 and 李天. 锗氮共掺碳化硅晶体杂质浓度表征及其电学性质研究. 无机材料学报, 2018.
[88] 陈秀芳 , 徐现刚 , 胡小波 , 赵显 and 张福生. High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching. Mater Lett, 195, 82, 2017.
[89] 胡小波. Raman study of phonons in bismuth triborate BiB3O6 crystal. JOURNAL OF APPLIED PHYSICS, 97, 335011, 2005.
[90] 杨祥龙 , 陈秀芳 , 彭燕 , 胡小波 and 徐现刚. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth. CrystEngComm, 20, 1705, 2018.

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