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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[76] 胡小波. BN坩埚中的AIN单晶生长. 《人工晶体学报》, 435, 2006.
[77] 胡小波. AlN单晶生长研究进展. 《人工晶体学报》, 35, 177, 2006.
[78] 胡小波 and 徐现刚. Hierarchical Porous Patterns of n-type 6HeSiC Crystals via Photoelectrochemical Etching. Journal of material science and technology, 29, 655, 2013.
[79] 胡小波 and 徐现刚. Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC wafers. Acta Metallurgica Sinica (English Letters), 27, 1083, 2014.
[80] 胡小波. Initial formation stage and succedent biomineralization of pearls. MATERIALSCHARACTERIZATION, 90, 127, 2014.
[81] 胡小波 , 彭燕 and 徐现刚. 以（1015）面为籽晶的6H -SiC单晶生长与缺陷研究. 《人工晶体学报》, 39, 287, 2010.
[82] 胡小波 , 彭燕 and 徐现刚. 6H-SiC成核表面形貌与缺陷产生的研究. 《人工晶体学报》, 38, 7, 2009.
[83] 胡小波 , 徐现刚 and 彭燕. Stacking faults in semi-polar 6H-SiC single crystals. CRYSTAL RESEARCH AND TECHNOLOGY, 36, 357, 2011.
[84] 胡小波 and 徐现刚. Birefringence images of micropipes viewed end-on in 6H-SiC single crystals. Journal of Applied Crystallography, 41, 939, 2008.
[85] 胡小波 and 徐现刚. Characterization of foreign grain on 6H-SiC facet. Journal of Central South University of Techno, 16, 344, 2009.
[86] 陈秀芳 , 杨祥龙 , 徐现刚 and 胡小波. Polarized Raman Scattering of Epitaxial Graphene Prepared by Thermal Decomposition of SiC. ECS Journal of Solid State Science and Technology, 2018.
[87] 谢雪健 , 孙丽 , 陈秀芳 , 杨祥龙 , 胡小波 and 徐现刚. Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique. SCRIPTA MATERIALIA, 76, 2019.
[88] 陈秀芳 , 杨祥龙 , 徐现刚 , 胡小波 , 彭燕 and 秦笑. Raman scattering study on phonon anisotropic properties of SiC. JOURNAL OF ALLOYS AND COMPOUNDS , 776, 1048, 2019.
[89] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS , 2016.
[90] 徐现刚 , 胡小波 , 陈秀芳 and 彭燕. Thermal conductivity of 4H-SiC single crystals. JOURNAL OF APPLIED PHYSICS, 2013.

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