胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[61] 胡小波. Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography. Journal of Applied Crystallography, 42, 1068, 2009.
[62] 胡小波 , 陈秀芳 and 徐现刚. 金刚石微粉对SiC机械抛光的研究影响. 《人工晶体学报》, 44, 295, 2015.
[63] 胡小波 , 陈秀芳 and 徐现刚. Chemical Mechanical Polishing of 4H-SiC with Strong Oxidizing Slurry. 《人工晶体学报》, 44, 1741, 2015.
[64] 胡小波 , 徐现刚 , 陈秀芳 and 彭燕. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials Science Forum, 2015.
[65] 胡小波 and 徐现刚. Infrared transmission and reflectivity measurements of 4H- and 6H-SiC single crystals. Materials Science Forum, 2015.
[66] 胡小波. Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE. JOURNAL OF ALLOYS AND COMPOUNDS, 509, 3656, 2011.
[67] 胡小波. Thermal conductivity of 4H-SiC single crystal. Journal of applied physics, 113, 535031, 2013.
[68] 胡小波. Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals. Journal of crystal growth, 293, 93, 2006.
[69] 胡小波 and 徐现刚. Development of bulk SiC single crystal grown by physical vapor transport method. Optical Materials, 23, 415, 2003.
[70] 胡小波 Comparison of Different Crucible Materials for the Growth of AlN Crystals. 《结构化学》, 26, 1203, 2007.
[71] 胡小波. BN坩埚中的AIN单晶生长. 《人工晶体学报》, 435, 2006.
[72] 胡小波. AlN单晶生长研究进展. 《人工晶体学报》, 35, 177, 2006.
[73] 胡小波 and 徐现刚. Hierarchical Porous Patterns of n-type 6HeSiC Crystals via Photoelectrochemical Etching. Journal of material science and technology, 29, 655, 2013.
[74] 胡小波 and 徐现刚. Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC wafers. Acta Metallurgica Sinica (English Letters), 27, 1083, 2014.
[75] 胡小波. Initial formation stage and succedent biomineralization of pearls. MATERIALSCHARACTERIZATION, 90, 127, 2014.

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