胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[91] 谢雪健 , 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. Synthesis and characterization of high quality {100} diamond single crystal. Journal of Materials Science-Materials in Electronics, 28, 9813, 2017.
[92] 肖龙飞 , 胡小波 , 陈秀芳 , 彭燕 , 杨祥龙 and 徐现刚. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory. AIP Advances, 7, 2017.
[93] 胡小波 , 徐现刚 and 张恒. Using coupling slabs to tailor surface-acoustic-wave band structures in phononic crystals consisting of pillars attached to elastic substrates. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 60, 2017.
[94] 胡小波 , 谢雪健 , 徐现刚 and 崔潆心. Spatial variation of lattice plane bending of 4HSiC substrates. CrystEngComm, 19, 3844, 2017.
[95] 陈秀芳 , 徐现刚 , 胡小波 , 赵显 and 张福生. High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching. Materials letters, 195, 82, 2017.
[96] 谢雪健 , 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals. JOURNAL OF ALLOYS AND COMPOUNDS, 691, 1033, 2017.
[97] 胡小波. Domain structures and phase transitions of PMNT single crystals. Journal of crystal growth, 2004.
[98] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS, 2016.
[99] 杨祥龙 , 徐现刚 , 陈秀芳 and 胡小波. 宽禁带SiC单晶衬底研究进展. 《电力电子技术》, 51, 12, 2017.
[100] 徐现刚 and 胡小波. Enhanced outputpower of (indium) gallium nitride light emitting diodes by a transparent currentspreading-film composedofadisorderednetworkofindiumtinoxidenanorods. Materials Science in Semiconductor Processing, 2013.
[101] 胡小波 , 陈秀芳 , 彭燕 and 徐化勇. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 2015.
[102] 胡小波 , 陈秀芳 , 杨祥龙 , 徐现刚 and 谢雪健. Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction. CrystEngComm, 19, 6527, 2017.
[103] 徐现刚 , 彭燕 and 胡小波. Characterization of Nitrogen-Boron doped 4H-SiC substrates. International Journal of ELECTROCHEMICAL, 2013.
[104] 胡小波. The stress birefringence images of low angle grain boundaries in 6H-SiC single crystals . Crystal Research, 2012.
[105] 胡小波. Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography. Journal of Applied Crystallography, 42, 1068, 2009.

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