胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[106] 胡小波 , 陈秀芳 , 彭燕 and 徐化勇. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 2015.
[107] 胡小波 , 陈秀芳 , 杨祥龙 , 徐现刚 and 谢雪健. Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction. CrystEngComm, 19, 6527, 2017.
[108] 徐现刚 , 彭燕 and 胡小波. Characterization of Nitrogen-Boron doped 4H-SiC substrates. International Journal of ELECTROCHEMICAL, 2013.
[109] 胡小波. The stress birefringence images of low angle grain boundaries in 6H-SiC single crystals . Crystal Research, 2012.
[110] 胡小波. Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography. Journal of Applied Crystallography, 42, 1068, 2009.
[111] 胡小波 , 王翎 and 徐现刚. 透射电子显微术和高分辨X射线衍射技术研究AlN单晶生长习性. 《人工晶体学报》, 37, 1117, 2008.
[112] 胡小波. Raman study of phonons in K2Al2B2O7 crystals. APPLIED PHYSICS LETTERS, 85, 2241, 2004.
[113] 陈秀芳 , 徐现刚 and 胡小波. 金刚石微粉对SiC机械抛光的研究影响. 《人工晶体学报》, 2015.
[114] 陈秀芳 , 徐现刚 and 胡小波. Chemical Mechanical Polishing of 4H-SiC with Strong Oxidizing Slurry. 《人工晶体学报》, 2015.
[115] 陈秀芳 , 杨祥龙 , 彭燕 , 胡小波 and 徐现刚. 高质量N 型SiC 单晶生长及其器件应用. 《人工晶体学报》, 2015.
[116] 陈秀芳 , 彭燕 , 徐现刚 and 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials science forum, 2015.
[117] 徐现刚 and 胡小波. Infrared transmission and reflectivity measurements of 4H- and 6H-SiC single crystals. Materials science forum, 2015.
[118] 徐现刚 and 胡小波. Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE. JOURNAL OF ALLOYS AND COMPOUNDS, 509, 3656, 2011.
[119] 胡小波. Thermal conductivity of 4H-SiC single crystal. Journal of applied physics, 113, 053503-1, 2013.
[120] 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 2016.

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