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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[106] 胡小波 , 王翎 and 徐现刚. 透射电子显微术和高分辨X射线衍射技术研究AlN单晶生长习性. 《人工晶体学报》, 37, 1117, 2008.
[107] 胡小波. Raman study of phonons in K2Al2B2O7 crystals. APPLIED PHYSICS LETTERS, 85, 2241, 2004.
[108] 陈秀芳 , 徐现刚 and 胡小波. 金刚石微粉对SiC机械抛光的研究影响. 《人工晶体学报》, 2015.
[109] 陈秀芳 , 徐现刚 and 胡小波. Chemical Mechanical Polishing of 4H-SiC with Strong Oxidizing Slurry. 《人工晶体学报》, 2015.
[110] 陈秀芳 , 杨祥龙 , 彭燕 , 胡小波 and 徐现刚. 高质量N 型SiC 单晶生长及其器件应用. 《人工晶体学报》, 2015.
[111] 陈秀芳 , 彭燕 , 徐现刚 and 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials science forum, 2015.
[112] 徐现刚 and 胡小波. Infrared transmission and reflectivity measurements of 4H- and 6H-SiC single crystals. Materials science forum, 2015.
[113] 徐现刚 and 胡小波. Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE. JOURNAL OF ALLOYS AND COMPOUNDS, 509, 3656, 2011.
[114] 胡小波. Thermal conductivity of 4H-SiC single crystal. Journal of applied physics, 113, 053503-1, 2013.
[115] 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 2016.
[116] 胡小波. Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals. Journal of crystal growth, 2006.
[117] 胡小波. Development of bulk SiC single crystal grown by physical vapor transport method. Optical Materials, 2003.
[118] 胡小波. 同步辐射单色光形貌术观察6H-SiC单晶中的微管缺陷. 《人工晶体学报》, 33, 332, 2004.
[119] 胡小波. Comparison of Different Crucible Materials for the Growth of AlN Crystals. 《结构化学》, 2007.
[120] 胡小波. BN坩埚中的AIN单晶生长. 《人工晶体学报》, 2006.

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