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Impacts of Poly-Si Channel on Cell Variations in Vertical Scaled Charge-Trap (CT) 3D NAND Flash Memory

发布时间：2023-05-18 点击数：

所属单位：信息科学与工程学院

论文名称：Impacts of Poly-Si Channel on Cell Variations in Vertical Scaled Charge-Trap (CT) 3D NAND Flash Memory

发表刊物：IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

第一作者：王菲

论文编号：1402446227466883073

字数：3

是否译文：否

发表时间：2020-11

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Impacts of Poly-Si Channel on Cell Variations in Vertical Scaled Charge-Trap (CT) 3D NAND Flash Memory