Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory
发布时间：2023-05-18 点击数：
所属单位：信息科学与工程学院
论文名称：Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory
发表刊物：5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
关键字：3D NAND flash;operation intervals;program disturb;lateral charge migration
第一作者：方晓彤
论文编号：1478212210961420289
字数：3
是否译文：否
发表时间：2021-04