TID Radiation Impacts on Charge-trapping Macaroni 3D NAND Flash Memory
所属单位:信息科学与工程学院
论文名称:TID Radiation Impacts on Charge-trapping Macaroni 3D NAND Flash Memory
发表刊物:2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
关键字:Charge trapping;Failure (mechanical);Failure analysis;Integrated circuits;Ionizing radiation;Irradiation;Leakage currents;Memory architecture;Metals;NAND circuits;Threshold voltage
第一作者:秦琦
论文编号:1395301829817929729
卷号:2020-July
字数:3
是否译文:否
发表时间:2020-07