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彭燕

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性别：女

在职信息：在职

所在单位：晶体材料研究院

入职时间：2011-08-16

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[41] 慈爽. Photoluminescence properties of N-B Co-doped fluorescent SiC. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35, 2020.
[42] 谢雪健 , 胡小波 , 徐现刚 , 陈秀芳 , 杨祥龙 and 彭燕. Photoluminescence properties of N–B Co-doped fluorescent SiC. Semicond. Sci. Tech., 2020.
[43] 胡小波 and 彭燕. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS RESEARCH BULLETION, 2019.
[44] 徐现刚 , 胡小波 and 彭燕. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 2019.
[45] 陈秀芳 , 胡小波 , 徐现刚 and 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attach. CrystEngComm, 22, 6957, 2018.
[46] 胡小波 , 彭燕 and 徐现刚. 6H-SiC成核表面形貌与缺陷产生的研究. 《人工晶体学报》, 38, 7, 2009.
[47] 陈秀芳 , 杨祥龙 , 徐现刚 , 胡小波 , 彭燕 and 秦笑. Raman scattering study on phonon anisotropic properties of SiC. JOURNAL OF ALLOYS AND COMPOUNDS , 776, 1048, 2019.
[48] 杨祥龙 , 陈秀芳 and 彭燕. Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystal. Materials Science Forum, 2017.
[49] 彭燕 , 徐现刚 and 胡小波. Characterization of Nitrogen-Boron doped 4H-SiC substrates. International Journal of ELECTROCHEMICAL, 2013.
[50] 杨祥龙 , 陈秀芳 , 彭燕 , 胡小波 and 徐现刚. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation. CrystEngComm, 20, 1705, 2018.
[51] 谢雪健 , 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. Synthesis and characterization of high quality {100} diamond single crystal. Journal of Materials Science-Materials in Electronics, 28, 9813, 2017.
[52] 肖龙飞 , 胡小波 , 陈秀芳 , 彭燕 , 杨祥龙 and 徐现刚. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch ba. AIP Advances, 7, 2017.
[53] 谢雪健 , 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals. JOURNAL OF ALLOYS AND COMPOUNDS , 691, 1033, 2017.
[54] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS , 2016.
[55] 徐化勇 , 胡小波 , 陈秀芳 and 彭燕. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 24, 673051, 2015.
[56] 徐现刚 , 彭燕 and 胡小波. Characterization of Nitrogen-Boron doped 4H-SiC substrates. International Journal of ELECTROCHEMICAL, 2013.
[57] 陈秀芳 , 杨祥龙 , 彭燕 , 胡小波 and 徐现刚. 高质量N 型SiC 单晶生长及其器件应用. 《人工晶体学报》, 2015.
[58] 胡小波 , 陈秀芳 , 彭燕 and 徐现刚. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials Science Forum, 2015.
[59] 彭燕 , 陈秀芳 , 胡小波 and 徐现刚. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 2016.
[60] 彭燕 and 徐现刚. Temperature and doping dependence of the Raman scattering in 4H-SiC. optical material express, 2016.

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