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彭燕

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性别：女

在职信息：在职

所在单位：晶体材料研究院

入职时间：2011-08-16

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[21] 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attach. CRYSTENGCOMM, 6957, 2018.
[22] 胡秀飞. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposi. MATERIALS TODAY COMMUNICATIONS, 2022.
[23] 杨祥龙. Inhomogeneity of Minority Carrier Lifetime in 4H-SiC Substrates. CRYSTALLOGRAPHY REPORTS, 1231, 2019.
[24] 杨祥龙. Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals. Materials Science Forum, 307, 2017.
[25] 彭燕. Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching tr. CRYSTENGCOMM, 353, 2020.
[26] 胡小波. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS, 2019.
[27] 彭燕. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 1145, 2016.
[28] 彭燕. Temperature-dependent photoluminescence spectra mechanism analysis of N–B co-doped 4H–SiC. Materials Science in Semiconductor Processing, 2022.
[29] 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials Science Forum, 2015.
[30] 于金英. Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers. CrystEngComm, 24, 1582-1589, 2022.
[31] 段鹏. 用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备. 《材料导报》, 35, 4034-4037+4041, 2021.
[32] 王鹤静. Micropipes in SiC Single Crystal Observed by Molten KOH Etching. MATERIALS, 14, 2021.
[33] 杨祥龙. 晶格畸变检测仪研究碳化硅晶片中位错缺陷分布. 《人工晶体学报》, 2021.
[34] 王希玮. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 13, 2019.
[35] 王希玮. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS, 12, 2019.
[36] 于金英. Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching t. CrystEng Comm, 23, 353, 2021.
[37] 彭燕. 用于MPCVD 金刚石薄膜生长的高表面质量HTHP 金刚石的制备. 《材料导报》, 2021.
[38] 彭燕. Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching tr. CRYSTENGCOMM, 2020.
[39] 彭燕. 半绝缘碳化硅单晶衬底的研究进展. 《人工晶体学报》, 2021.
[40] 杨祥龙. Inhomogeneity of Minority Carrier Lifetime in 4H-SiC Substrates. CRYSTALLOGRAPHY REPORTS, 2019.

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