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姜光远.The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors. Applied Physics A: Materials Science and Processing, 127,2021.
刘阳.A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology. SCIENTIFIC REPORTS, 11,2021.
姜光远.The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 156,2021.
姜光远.The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors. Physica E-Low-Dimensional Systems & Nanostructures, 127,2021.
杨勇雄.Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method. AIP ADVANCES, 11,2021.
李云鹏.Ambipolar SnO<inf>x</inf>thin-film transistors achieved at high sputtering power. Applied Physics Letters, 27,2018.
李云鹏.Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays. IEEE Transactions on Electron Devices, 66:950,2019.
崔鹏.Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors. Physica E-Low-Dimensional Systems & Nanostructures, 119,2020.
李亚萍.An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 39:2640,2020.
杨勇雄.Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I-V Characteristics. ELECTRONICS, 9,2020.
