郁万成
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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：山东大学
学历：博士研究生毕业
学位：工学博士学位
所在单位：新一代半导体材料研究院
入职时间：2022-06
学科：集成电路工程
材料科学与工程
办公地点：半导体研发大楼308
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- [1] 孙丽 , 姜晓呈 , 徐现刚 , 陈秀芳 , 任华英 and 董强. Stepwise growth of graphene on silicon carbide: Decoupling formation buffer layer from graphene growth. NANO RESEARCH, 2026.
- [2] 仲光磊 , 张宁 , 胡小波 , 杨祥龙 , 谢雪健 , 陈秀芳 and 徐现刚. Suppressing SiC crystal edge decomposition through pore-type crucible. VACUUM, 239, 2025.
- [3] 徐现刚 , 刘鹏 , 胡小波 , 陈秀芳 , 杨祥龙 and 谢雪健. Enhancement of edge quality in SiC single crystals via flow field control with multi-zone graphite rings. JOURNAL OF ALLOYS AND COMPOUNDS, 188578, 2026.
- [4] 徐现刚 , 赵东升 , 王丽焕 and 陈秀芳. Effect of coil movement on the growth of silicon carbide by top-seeded solution growth. Journal Crystal Growth, 128605, 2026.
- [5] 王丽焕 and 张茜莹. Effects of crucible etching and polycrystal deposition in the top-seeded solution growth of SiC single crystal. Journal of crystal growth, 681, 2026.
- [6] 徐现刚 , 李庆雨 , 仲光磊 , 王荣堃 , 谢雪健 , 杨祥龙 and 陈秀芳. Study on Surface Damage of 12-Inch Silicon Carbide Wafers During Diamond Wire Cutting. 2025 22st China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2025.
- [7] 徐现刚 , 刘鹏 , 胡小波 , 王丽焕 and 陈秀芳. Optimization of Thermal Field for Large Scale SiC Growth with Resistance Heating Method. 2025 22st China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2025.
- [8] 张宁. Numerical simulation of thick SiC crystal based on ring-shaped powder structure. Journal of crystal growth, 665, 2025.
- [9] 姜嘉琦. Self-Supported SiC@graphene Hierarchical Electrodes for Ultra-Stable Supercapacitors. 中国化学会第一届全国表界面科学会议, 2025.
- [10] 姜晓呈. Two-step growth method of graphene on silicon carbide for Hall effect sensors: decoupling buffer layer formation from graphene growth. 中国化学会第一届全国表界面科学会议, 2025.
- [11] 姜晓呈. SiC wafer chamfering process research. 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2024.
- [12] 王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth. JOURNAL OF MATERIALS SCIENCE Journal, 2024.
- [13] Effect of basal plane bending on the atomic step morphology of the 4H-SiC substrate surface. Vaccum, 2023, 212,112013,
- [14] Wafer-scale graphene on 4-inch SiC. Materials Science Forum, 2016, 858: 1133-1136,
- [15] Laser Ablation of 6H-SiC Single Crystals and Spectral Characterization. Spectroscopy and Spectral Analysis, 2016, 36 (04): 1255-1260,
- [16] The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth. RSC Advances, 2016, 6(103): 100908-100915.,
- [17] Research on band-edge emission properties and mechanism of high quality single-crystal diamond. Carbon, 2018, 132: 651-655,
- [18] The effect of oxygen on the epitaxial growth of diamond. Journal of Semiconductor, 2018, 39(12):48-51.,
- [19] Structural strain in single layer graphene fabricated on SiC. Materials Science Forum, 2019, 963: 161-165.,
- [20] Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth. CrystEngComm, 2021, 23(9): 1982-1990,