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钟宇
-
副研究员
- 性别：女
- 毕业院校：德国拜罗伊特大学
- 学历：博士研究生毕业
- 学位：博士生
- 在职信息：在职
- 所在单位：新一代半导体材料研究院
- 入职时间： 2021-01-11
- 电子邮箱：zhongyu555@hotmail.com
访问量：
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李琪.
Structures, influences, and formation mechanism of planar defects on (100), (001) and (-201) planes in β-Ga2O3 crystals.
Physical chemistry chemical physics,
26,
12564-12572,
2025.
-
Wang, Xinyu.
Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.
Results in Physics,
1,
2025.
-
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2025.
-
刘明勋.
In situ formation of a low-dimensional perovskite structure for efficient single-crystal MAPbI3 solar cells with enhanced ambient stability.
Journal of Materials Chemistry C,
2025.
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王天露.
Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.
MICROELECTRONICS JOURNAL,
160,
2025.
-
王天露.
Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature.
179-183,
2025.
