钟宇

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副研究员
- 性别:女
- 毕业院校:德国拜罗伊特大学
- 学历:博士研究生毕业
- 学位:博士生
- 在职信息:在职
- 所在单位:新一代半导体材料研究院
- 入职时间: 2021-01-11
- 所属院系:
新一代半导体材料集成攻关大平台
- 电子邮箱:73ac8adaf0ed5f9581d09106f4dd5e8866b6862796f23788eaf94b75b6b9b3f08013bbbd3ba990eac39fdb009c2c4b04a6a0811a232d23536edbc650068bb69a1de1d055e6873871ec4334b113c09ced4a2bf8aa279e59a721cadba6f8ea91c1fe59f68b41b8800955f6e0c023f318d71c412f8f1f2d7cf603fa541ec46a42f9
访问量:
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姜昌可.
In-Situ Growth of One-Dimensional Blocking Layer to Mitigate Deficient Surface of Single-Crystal Perovskites.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,
2025.
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李大林.
Efficient and Highly Stable Lateral Perovskite Single-Crystal Solar Cells through Crystal Engineering and Weak Ion Migration.
Advanced Functional Materials,
2025.
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李琪.
Structures, influences, and formation mechanism of planar defects on (100), (001) and (-201) planes in β-Ga2O3 crystals.
Physical chemistry chemical physics,
26,
12564-12572,
2025.
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Wang, Xinyu.
Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.
Results in Physics,
1,
2025.
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张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2025.
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刘明勋.
In situ formation of a low-dimensional perovskite structure for efficient single-crystal MAPbI3 solar cells with enhanced ambient stability.
Journal of Materials Chemistry C,
2025.
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碳化硅MOSFET三维仿真的电流密度提升,2024-01-16,2024-07-16
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后硅时代功率半导体器件研制及产业化技术研究-4,2022-02-01,2025-02-28
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后硅时代功率半导体器件研制及产业化,2022-02-01,2025-02-28
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(包干项目)半导体光电材料的可控制备与器件研究,2022-03-30,2025-03-31
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(包干项目)钙钛矿薄膜微观结构对离子迁移及器件稳定性的影响,2022-09-07,2025-12-31