钟宇
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副教授
- 性别：女
- 毕业院校：德国拜罗伊特大学
- 学历：博士研究生毕业
- 学位：博士生
- 所在单位：新一代半导体材料研究院
- 入职时间： 2021-01
- 所属院系：
新一代半导体材料研究院
- 电子邮箱：73ac8adaf0ed5f9581d09106f4dd5e8866b6862796f23788eaf94b75b6b9b3f08013bbbd3ba990eac39fdb009c2c4b04a6a0811a232d23536edbc650068bb69a1de1d055e6873871ec4334b113c09ced4a2bf8aa279e59a721cadba6f8ea91c1fe59f68b41b8800955f6e0c023f318d71c412f8f1f2d7cf603fa541ec46a42f9
访问量：
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徐现刚 , 苑登文 , 徐明升 and 韩吉胜.
Investigation of small-angle SiC ICP etching assisted by optical emission spectroscopy diagnostics.
VACUUM,
115050,
2026.
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Handoko LINEWIH , 徐现刚 , 徐明升 , 崔潆心 and 韩吉胜.
Surge Current Capability of Dual-Chip Packaged SiC Schottky Barrier Diodes.
JOURNAL OF ELECTRONIC PACKAGING,
2026.
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徐现刚 , 苑登文 and 韩吉胜.
Inductively coupled plasma etching of silicon carbide: a review.
Journal of Materials Science: Materials in Electronics,
2264,
2025.
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陈召来 and Ning Li.
Efficient and Stable FA0.95Cs0.05PbI3 Single-Crystal Perovskite Solar Cells via Hierarchical Elimination of Surface Iodide Vacancies.
ACS nano,
2026.
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张健.
Pressure-Induced Jahn-Teller distortion suppression and evolution of optical and optoelectronic properties in distorted perovskite oxide TeCuO3.
Journal of Physical Chemistry C,
11634,
2025.
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王天露.
Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.
MICROELECTRONICS JOURNAL,
160,
2025.
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碳化硅MOSFET三维仿真的电流密度提升,2024-01-16,2024-07-16
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后硅时代功率半导体器件研制及产业化技术研究-4,2022-02-01,2025-02-28
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后硅时代功率半导体器件研制及产业化,2022-02-01,2025-02-28
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（包干项目）半导体光电材料的可控制备与器件研究,2022-03-30,2025-03-31
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（包干项目）钙钛矿薄膜微观结构对离子迁移及器件稳定性的影响,2022-09-07,2025-12-31