钟宇
-
副研究员
- 性别：女
- 毕业院校：德国拜罗伊特大学
- 学历：博士研究生毕业
- 学位：博士生
- 在职信息：在职
- 所在单位：新一代半导体材料研究院
- 入职时间： 2021-01-11
- 所属院系：
新一代半导体材料集成攻关大平台
- 电子邮箱：73ac8adaf0ed5f9581d09106f4dd5e8866b6862796f23788eaf94b75b6b9b3f08013bbbd3ba990eac39fdb009c2c4b04a6a0811a232d23536edbc650068bb69a1de1d055e6873871ec4334b113c09ced4a2bf8aa279e59a721cadba6f8ea91c1fe59f68b41b8800955f6e0c023f318d71c412f8f1f2d7cf603fa541ec46a42f9
访问量：
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[1]
姜昌可.
In-Situ Growth of One-Dimensional Blocking Layer to Mitigate Deficient Surface of Single-Crystal Perovskites.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,
2024.
-
[2]
李大林.
Efficient and Highly Stable Lateral Perovskite Single-Crystal Solar Cells through Crystal Engineering and Weak Ion Migration.
Advanced Functional Materials,
2024.
-
[3]
李琪.
Structures, influences, and formation mechanism of planar defects on (100), (001) and (-201) planes in β-Ga2O3 crystals.
Physical chemistry chemical physics,
26,
12564-12572,
2024.
-
[4]
Wang, Xinyu.
Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.
Results in Physics,
1,
2024.
-
[5]
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2024.
-
[6]
刘明勋.
In situ formation of a low-dimensional perovskite structure for efficient single-crystal MAPbI3 solar cells with enhanced ambient stability.
Journal of Materials Chemistry C,
2025.
-
[7]
王天露.
Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration.
MICROELECTRONICS JOURNAL,
160,
2025.
-
[8]
王天露.
Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature.
21st China International Forum on Solid State Lighting and 10th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2024,
179-183,
2025.
-
[9]
王新宇.
Simulation and fabrication of 4H-SiC SBD with main P-epilayer island termination.
MICROELECTRONICS JOURNAL,
106732,
2025.
-
[10]
罗兰.
The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices.
Physica Status Solidi A-Applications and Materials Science,
2025.
-
[11]
王新宇.
Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode.
2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
2024.
-
[12]
来玲玲.
Impacts of silicon carbide defects on electrical characteristics of SiC devices.
JOURNAL OF APPLIED PHYSICS,
1,
2025.
-
[13]
Wang, Xinyu.
Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode.
物理结果,
62,
2024.
-
[14]
王新宇.
Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode.
IEEE Electron Device Letters,
2024.
-
[15]
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2024.
-
[16]
钟宇.
The Impact of Solvent Vapor on the Film Morphology and Crystallization Kinetics of Lead Halide Perovskites during Annealing.
ACS Applied Materials & Interfaces,
2021.
-
[17]
Mihirsinh Chauhan.
Investigating Two-Step MAPbI3 Thin Film Formation during Spin Coating by Simultaneous in situ Absorption and Photoluminescence Spectroscopy.
Journal of Materials Chemistry A,
2020.
-
[18]
钟宇.
Role of PCBM in the Suppression of Hysteresis in Perovskite Solar Cells.
Advanced Functional Materials,
2020.
-
[19]
钟宇.
In situ Investigation of Light Soaking in Organolead Halide Perovskite Films.
APL Materials,
2019.