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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[16] 段鹏. 用于MPCVD 金刚石薄膜生长的高表面质量HTHP 金刚石的制备. 《材料导报》, 2021.
[17] 段鹏. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 2019.
[18] 王鹤静. Micropipes in SiC Single Crystal Observed by Molten KOH Etching. Materials, 2021.
[19] 段鹏. 用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备. 《材料导报》, 2021.
[20] 肖龙飞. Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption. Applied Optics, 2804, 2018.
[21] 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CRYSTENGCOMM, 6957, 2018.
[22] 杨祥龙. Inhomogeneity of Minority Carrier Lifetime in 4H-SiC Substrates. CRYSTALLOGRAPHY REPORTS, 1231, 2019.
[23] 杨祥龙. Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals. Materials Science Forum, 307, 2017.
[24] 彭燕. Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching treatment. CRYSTENGCOMM, 353, 2020.
[25] 胡小波. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS, 2019.
[26] 彭燕. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 1145, 2016.
[27] 彭燕. Temperature-dependent photoluminescence spectra mechanism analysis of N–B co-doped 4H–SiC. Materials Science in Semiconductor Processing, 2022.
[28] 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials Science Forum, 2015.
[29] 于金英. Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers. CrystEngComm, 24, 1582-1589, 2022.
[30] 段鹏. 用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备. 《材料导报》, 35, 4034-4037+4041, 2021.

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