胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[31] 王鹤静. Micropipes in SiC Single Crystal Observed by Molten KOH Etching. MATERIALS, 14, 2021.
[32] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN. CRYSTENGCOMM, 23, 7245, 2021.
[33] 刘磊. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates. CRYSTENGCOMM, 24, 1840, 2022.
[34] 杨祥龙. 晶格畸变检测仪研究碳化硅晶片中位错缺陷分布. 《人工晶体学报》, 2021.
[35] 李啟. Introduction of an interfacial binary metal between organics and semiconductor to boost photocatalytic hydrogen production. MATERIALS LETTERS Journal, 291, 2021.
[36] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN. CrystEngComm, 7245, 2021.
[37] 俞瑞仙. Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating. MATERIALS, 7441, 2021.
[38] 刘磊. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates. CrystEngComm, 1840, 2022.
[39] 王希玮. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 13, 2019.
[40] 王希玮. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS, 12, 2019.
[41] 于金英. Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment. CrystEng Comm, 23, 353, 2021.
[42] 彭燕. 用于MPCVD 金刚石薄膜生长的高表面质量HTHP 金刚石的制备. 《材料导报》, 2021.
[43] 彭燕. Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching treatment. CRYSTENGCOMM, 2020.
[44] 彭燕. 半绝缘碳化硅单晶衬底的研究进展. 《人工晶体学报》, 2021.
[45] 杨祥龙. Inhomogeneity of Minority Carrier Lifetime in 4H-SiC Substrates. CRYSTALLOGRAPHY REPORTS, 2019.

共204条 3/14

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