胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[46] 于金英. Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment. CrystEng Comm, 23, 353, 2021.
[47] 彭燕. 用于MPCVD 金刚石薄膜生长的高表面质量HTHP 金刚石的制备. 《材料导报》, 2021.
[48] 彭燕. Revelation of the dislocations in the C face of 4HSiC substrates using a microwave plasma etching treatment. CRYSTENGCOMM, 2020.
[49] 彭燕. 半绝缘碳化硅单晶衬底的研究进展. 《人工晶体学报》, 2021.
[50] 杨祥龙. Inhomogeneity of Minority Carrier Lifetime in 4H-SiC Substrates. CRYSTALLOGRAPHY REPORTS, 2019.
[51] Li, Yimeng. High-Responsivity Graphene/4H-SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields. Advanced Optical Materials, 8, 2020.
[52] 秦笑. Polarized Raman Scattering of Epitaxial Graphene Prepared by Thermal Decomposition of SiC. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7, M35, 2018.
[53] 肖龙飞. Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption. Applied Optics, 20, 2804, 2018.
[54] 韩晓桐. Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond. MATERIALS, 13, 2020.
[55] 慈爽. Photoluminescence properties of N-B Co-doped fluorescent SiC. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35, 2020.
[56] 姚倩. Optical investigation of Pr3+ doped CsSrI3 single crystals grown by EFG method. MATERIALS LETTERS Journal, 268, 2020.
[57] 谢雪健 , 徐现刚 , 陈秀芳 , 杨祥龙 and 彭燕. Photoluminescence properties of N–B Co-doped fluorescent SiC. Semicond. Sci. Tech., 2020.
[58] 彭燕. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS RESEARCH BULLETION, 2019.
[59] 徐现刚 and 彭燕. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 2019.
[60] 陈秀芳 , 彭燕 , 徐现刚 and 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm, 22, 6957, 2018.

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