胡小波山东大学主页平台管理系统--中文主页

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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[46] Li, Yimeng. High-Responsivity Graphene/4H-SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields. Advanced Optical Materials, 8, 2020.
[47] 秦笑. Polarized Raman Scattering of Epitaxial Graphene Prepared by Thermal Decomposition of SiC. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7, M35, 2018.
[48] 肖龙飞. Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption. Applied Optics, 20, 2804, 2018.
[49] 韩晓桐. Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond. MATERIALS, 13, 2020.
[50] 慈爽. Photoluminescence properties of N-B Co-doped fluorescent SiC. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35, 2020.
[51] 姚倩. Optical investigation of Pr3+ doped CsSrI3 single crystals grown by EFG method. MATERIALS LETTERS Journal, 268, 2020.
[52] 谢雪健 , 徐现刚 , 陈秀芳 , 杨祥龙 and 彭燕. Photoluminescence properties of N–B Co-doped fluorescent SiC. Semicond. Sci. Tech., 2020.
[53] 彭燕. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. MATERIALS RESEARCH BULLETION, 2019.
[54] 徐现刚 and 彭燕. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 2019.
[55] 陈秀芳 , 彭燕 , 徐现刚 and 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods. CrystEngComm, 22, 6957, 2018.
[56] 夏盛清 , 张健 , 刘阳 , 胡小波 , 王蕾 , 陈召来 , 陶绪堂 and 蒋晓妹. Exploring Organic Metal Halides with Reversible Temperature-Responsive Dual-Emissive Photoluminescence. ChemSusChem, 2019.
[57] 胡小波 and 徐现刚. Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n？Type 4H-SiC Single Crystals. CRYSTAL GROWTH & DESIGN, 15, 3131, 2015.
[58] 胡小波 and 张承乾. Observation of inhomogeneity in congruent LiTaO3 crystal. Journal of crystal growth, 225, 6, 2001.
[59] 徐化勇 , 陈秀芳 , 彭燕 and 胡小波. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 24, 673051, 2015.
[60] 胡小波. The stress birefringence images of low angle grain boundaries in 6H-SiC single crystals. Crystal Research, 47, 603, 2012.

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